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RF3283
DUAL-BAND GSM900/DCS1800 TRANSMIT MODULE
RoHS Compliant & Pb-Free Product Package Style: Module (8mmx10mm)
GSM GaAs PA TXIN_LB 22
Features
Package 8x10x1.4mm GSM900 POUT 33.3dBm DCS1800 POUT 32.0dBm Integrated Antenna Switch and Harmonic Filtering Dedicated RX Ports IEC 61000-4-2 Compliant, 8kV on Antenna Port Enhanced PowerStarTM Architecture to Facilitate TRP Performance Automatic VBATT Tracking Circuit
TX_EN 25 VRAMP 26 B1 28 B2 29 B3 30 Fully Integrated Power Control and Switch Logic
pHEMT Switch
15 ANT
12
RX1
10 TXIN_HB 3
RX2
DCS GaAs PA
Functional Block Diagram
Applications
GSM900/DCS1800 Products GPRS Class 10 Compatible PowerStarTM Module 3V Dual-Band Handsets Portable Battery-Powered Equipment
Product Description
The RF3283 is a high-power, high-efficiency transmit module containing RFMD's PowerStarTM integrated power control, integrated pHEMT front end antenna switch and harmonic filtering functionality. All of which combine to provide for best in class harmonic emission control and RX and TX insertion loss. The device is self-contained with 50 input and output terminals with no matching components required. The integrated power control function based on RFMD's patented PowerStarTM control is incorporated, eliminating the need for directional couplers, detector diodes, power control ASIC's, and other power control circuitry; this allows the module to be driven directly from the DAC output. The device is designed for use as the final portion of the transmit chain in dual-band applications utilizing GSM900/DCS1800 and eliminates the need for PA to antenna switch module matching. On-board power control provides over 70dB control range. The integrated antenna switch allows true dual-band TX and RX functionality.
Ordering Information
RF3283 RF3283SB RF3283PCBA-41X Dual-Band GSM900/DCS1800 Transmit Module Transmit Module 5-Piece Sample Pack Fully Assembled Evaluation Board
Optimum Technology Matching(R) Applied
GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT
RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc.
Rev A1 DS071010
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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RF3283
Absolute Maximum Ratings Parameter
Supply Voltage Power Control Voltage (VRAMP) Input RF Power Max Duty Cycle Output Load VSWR Operating Case Temperature Storage Temperature
Rating
-0.3 to +6.0 -0.3 to +1.8 +10 25 20:1 -30 to +85 -55 to +150
Unit
V V dBm % C C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
Parameter
Overall Power Control VRAMP
Power Control "ON" Power Control "OFF" VRAMP Input Capacitance VRAMP Input Current Turn On/Off Time Power Control Range
Min.
Specification Typ.
Max.
Unit
Condition
1.6 0.13 10.0 0.25 20.0 10.0 2.0 50.0 3.5 3.2 4.6 1.0 20.0
V V pF A us dB V V A
Max. POUT, Voltage supplied to the input Min. POUT, Voltage supplied to the input DC to 2MHz VRAMP =VRAMP MAX VRAMP =0V to VRAMP MAX VRAMP =0.13V to VRAMP MAX Specifications Nominal operating limits PIN <-30dBm, TX Enable=Low, VRAMP =0V, Temp=-30C to +85C
Overall Power Supply
Power Supply Voltage Power Supply Current
Overall Control Signals
B1, B2, B3 "Low" B1, B2, B3 "High" B1, B2, B3 "High Current" TX Enable "Low" TX Enable "High" TX Enable "High Current" 0 1.38 0 1.38 0 2.0 1.0 0 2.0 1.0 0.4 3.0 2.0 0.5 3.0 2.0 V uA V V uA
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Rev A1 DS071010
RF3283
Parameter
GSM900 Mode
Operating Frequency Range Maximum Output Power 880 33.3 32.1 Total Efficiency Input Power Range Output Noise Power 30.0 -3.0 35.0 0 -86.0 -88.0 Forward Isolation 1 Forward Isolation 2 All Harmonics up to 12.75GHz All Non-Harmonic Spurious Input VSWR Output Load VSWR Stability Output Load VSWR Ruggedness 15:1 20:1 -70.0 -46.0 -45.0 +3.0 -75.0 -86.5 -58.0 -40.0 -36.0 -35.0 3.5:1 34.0 915 MHz dBm dBm % dBm dBm dBm dBm dBm dBm dBm Temp=+25C, VBATT =3.5V, VRAMP =1.6V Temp=+85C, VBATT =3.2V, VRAMP =1.6V POUT =33.1dBm, VBATT =3.5V Maximum output power guaranteed at minimum drive level 925MHz to 935MHz, RBW=100kHz, POUT >+5dBm 935MHz to 960MHz, RBW=100kHz, POUT >+5dBm B1,B3=High, TX_EN, B2=Low, PIN =-20dBm, VRAMP =0.13V TX_EN, B1,B3=High, B2=Low, PIN =-20dBm, VRAMP =0.13V Over all power levels (5dBm to 33dBm) Over all power levels (5dBm to 33dBm) Over all power levels (5dBm to 33dBm) Spurious<-36dBm, set VRAMP where POUT <33.0dBm into 50 load Set VRAMP where POUT <33.0dBm into 50 load. No damage or permanent degradation to part. 50.0 30.55 32.8 Set VCC =3.5V to 4.0V VRAMP where POUT =32.8dBm@ Load impedance=50 f=880MHz to 915MHz Change Load VSWR=3:1 all phases Measure delivered POUT with PIN =-2dBm to +2dBm
Min.
Specification Typ.
Max.
Unit
Condition
Temp=+25C, VBATT =3.5V, VRAMP MAX, PIN =0dBm, 25% Duty Cycle, Pulse Width=1154s
Input and Output Impedance Delivered POUT Range
Rev A1 DS071010
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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RF3283
Parameter
DCS1800 Mode
Operating Frequency Range Maximum Output Power 1710 32.0 30.4 Total Efficiency Input Power Range Output Noise Power Forward Isolation 1 Forward Isolation 2 All Harmonics up to 12.75GHz All Non-Harmonic Spurious Input VSWR Output Load VSWR Stability Output Load VSWR Ruggedness 15:1 20:1 24.0 -3.0 32.0 0 -84.0 -67.0 -49.0 -41.0 +3.0 -79.0 -52.0 -40.0 -36.0 -28.0 3.5:1 32.5 1785 MHz dBm dBm % dBm dBm dBm dBm dBm dBm Temp=+25C, VBATT =3.5V, VRAMP =1.6V Temp=+85C, VBATT =3.2V, VRAMP =1.6V POUT =31.4dBm, VBATT =3.5V Maximum output power guaranteed at minimum drive level 1805MHz to 1880MHz, RBW=100kHz, POUT >0dBm B1,B2,B3=High, TX_EN=Low, PIN =-20dBm, VRAMP =0.13V TX_EN, B1,B2,B3=High, PIN =-20dBm, VRAMP =0.13V Over all power levels (0dBm to 30dBm) Over all power levels (0dBm to 30dBm) Over all power levels (0dBm to 30dBm) Spurious<-36dBm, set VRAMP where POUT <30.0dBm into 50 load Set VRAMP where POUT <30.0dBm into 50 load. No damage or permanent degradation to part. 50.0 28.65 30.9 Set VCC =3.5V to 4.0V VRAMP where POUT =30.9dBm@ Load impedance=50 f=1710MHz to 1785MHz Change Load VSWR=3:1 all phases Measure delivered POUT with PIN =-2dBm to +2dBm
Min.
Specification Typ.
Max.
Unit
Condition
Temp=+25C, VBATT =3.5V, VRAMP MAX, PIN =0dBm, 25% Duty Cycle, Pulse Width=1154s
Input and Output Impedance Delivered POUT Range
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Rev A1 DS071010
RF3283
Parameter
RX-Section
Insertion Loss, ANT-RX1:Low Band Freq 925MHz to 960MHz Insertion Loss, ANT-RX2:High Band Freq 1805MHz to 1880MHz Ripple, RX1 Freq 925MHz to 960MHz Ripple, RX2 Freq 1805MHz to 1880MHz Return Loss, RX1 Freq 925MHz to 960MHz Return Loss, RX2 Freq 1805MHz to 1880MHz -21.0 -11.0 dB Temp=-15C to +85C, VCC =3.2V to 4.6V 7.0 -7.0 1.0 5.0 10.0 8.0 8.0 8.0 GSM900 TX Mode:Frequency=880MHz to 915MHz, POUT =+0dBm to +33dBm GSM900 TX Mode:Frequency=880MHz to 915MHz, POUT =+0dBm to +33dBm DCS1800 TX Mode:Frequency=1710MHz to 1785MHz, POUT =-5dBm to +30dBm DCS1800 TX Mode:Frequency=1710MHz to 1785MHz, POUT =-5dBm to +30dBm -21.0 -11.0 dB 0.2 0.25 dB 0.2 0.25 dB 1.4 1.9 dB 1.1 1.65 dB
Min.
Specification Typ.
Max.
Unit
Condition
Temp=-15C to +85C, VCC =3.2V to 4.6V
TX-Section
POUT at RX Port for Isolation GSM900 ANT-RX 1 GSM900 ANT-RX 2 DCS1800 ANT-RX 1 DCS1800 ANT-RX 2
Note: Isolation Calculation Example: Isolation=POUT @ANT-POUT @RXPort. Isolation LB(ANT-RX1)=33-10=23dB, Isolation HB(ANT-RX2)=308=22dB
Rev A1 DS071010
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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RF3283
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Pkg Base Function GND NC TXIN_HB GND GND GND NC GND GND RX2 GND RX1 GND GND ANT GND GND NC GND NC NC TXIN_LB NC GND TX_EN VRAMP VBATT B1 B2 B3 GND Description
Ground. Not used. TX RF input to PA for DCS1800 TX band, AC-coupled. Ground. Ground. Ground. Leave floating. Ground. Ground. High band RX output. This output covers the frequency range of DCS1800 band. Ground. Low band RX output. This output covers the frequency range of GSM900 band. Ground. Ground. Antenna port of the antenna switch, port is a 50 output. Ground. Ground. Leave floating. Ground. Not used. Not used. TX RF input to PA for GSM900 band, AC-coupled. Not used. Ground. This signal enables the PA for operation with a logic high. The switch is put in TX mode determined by B1, B2, and B3. Power control voltage from DAC. Power supply for the module. This should be connected to the battery terminal using as wide a trace as possible. Control pin along with B2 and B3 that selects mode of operation selects RX or TX operation. Control pin along with B1 and B3 that selects mode of operation selects band of operation. Control pin along with B1 and B2 that selects mode of operation. Ground.
Interface Schematic
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Rev A1 DS071010
RF3283
Package Drawing
8.00 0.10 1.40 1.25
10.00 0.10
0.450 0.075 0.200 TYP 0.950 TYP 1.150 TYP 1.300 TYP 1.850 TYP 2.250 TYP 2.800 3.125 3.925 4.250 TYP 4.800 TYP 6.150 TYP 6.700 TYP 7.050 TYP 7.250 TYP 7.800 TYP 9.250 TYP 8.800 7.650 TYP 7.100 TYP 5.815 5.135 4.865 TYP 3.300 TYP 2.350 TYP 1.200 TYP 1.135 TYP 1.065 TYP 0.815 TYP 0.200 TYP 0.000 0.815 TYP 1.085 TYP 1.150 TYP 2.965 3.235 3.850 5.200 TYP 5.750 TYP 6.850 TYP 6.915 TYP 7.185 TYP
R0.200 TYP 9.800 TYP 9.000 TYP 8.865 8.600 TYP 8.050 TYP 6.700 TYP 6.085 TYP 5.750 5.200 3.700 TYP 1.950 TYP 1.400 TYP 1.065 TYP 0.750 TYP 0.000
Shaded areas represent pin 1.
Dimensions in mm.
Package Style: Module (8mmx10mm)
Rev A1 DS071010
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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RF3283
Pin Out
VRAMP VBATT TXEN GND GND 24 23 NC 22 TXIN_LB 21 GND 20 NC 19 GND 18 NC 17 GND 16 GND B3 B2 B1 28
1
30
29
27
26
25
NC
2
TXIN_HB
3
GND
4
GND
5
GND
6
NC
7
GND
8
9
10 RX2
11 GND
12 RX1
13 GND
14 GND
15 ANT
GND
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Rev A1 DS071010
RF3283
Evaluation Board Schematic
C2 4.7 uF VBATT R5 10 k B1 C1 100 pF B2
J6 VRAMP
B3
J7 TXEN
30 1 2 J1 TX_IN_HB 3 4 5 6 7 8 9 10
29
28
27
26
25 24 23 22 21 20 19 18 17 16 J2 TX_IN_LB
11
12
13
14
15 V1 RF3283
J3 RX2
J5 RX1
J4 ANT
S1 B3 B2 B1 TXEN 8 7 6 5 SW_DIP4 R4 10 k R3 10 k R2 10 k R1 10 k P1 1 2 3 4 5 6 P1-7 P1-8 7 8 CON8 P3 1 GND CON1 1 2 3 4 C11 10 uF C10 10 uF
U2 8 7 6 5 1 2 3 4 + C3 4.7 uF
P1-1 P1-2 P1-3 P1-4 P1-5
VRAMP B3 B2 B1 TXEN GND VBATT
P2-1
P2 1 VBATT CON1
Rev A1 DS071010
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
9 of 16
RF3283
Theory of Operation
Product Description The RF3283 is a high-power, high-efficiency, transmit module (TXM) with fully-integrated power control functionality, harmonic filtering, band selectivity, and TX/RX switching. The TXM is self-contained, with 50 I/O terminals with two RX ports allowing true dual-band operation. The power control function eliminates all power control circuitry, including directional couplers, diode detectors, and power control ASIC's, etc. The power control capability provides 50dB continuous control range, and 70dB total control range, using a DAC-compatible, analog voltage input. Output power variations into varying load impedance are minimized by the power control circuitry in order to meet Total Radiated Power (TRP) requirements. The TX Enable feature provides for PA activation (TX mode) or RX mode/Stand-by. Internal switching provides a low-loss, low-distortion path from the Antenna port to the TX path (or RX port), while maintaining proper isolation. Integrated filtering provides ETSI compliant harmonic suppression at the antenna port even under high mismatch conditions, which is important as modern antennas today often present a load that significantly deviates from nominal impedance. Overview The RF3283 is a true dual-band GSM900/DCS1800 power amplifier module with fully integrated power control and antenna switch module eliminating the need for the complicated control loop design, harmonic filters, TX/RX switch and possible matching components. The power control loop can be driven directly from the DAC output in the baseband circuit. The module has two RX ports for GSM900/DCS1800 bands of operation. To control the mode of operation, there are four logic control signals: TX Enable, B1, B2, and B3. If control signals are limited, B3 may remain in the high state for all modes of operation. Module Control and Antenna Switch Logic
Mode Off Low Band RX (GSM900) High Band RX (DCS1800) Low Band Pre-TX (PA On/Switch Off) (GSM900) Low Band TX (PA On/Switch On) (GSM900) High Band Pre-TX (PA On/Switch Off) (DCS1800) High Band TX (PA On/Switch On) (DCS1800) TX_EN 0 0 0 1 1 1 1 B1 0 0 0 1 1 1 1 B2 0 0 1 0 0 1 1 B3 0 1 1 0 1 0 1
Table 1. Power Control Theory of Operation Most power control systems in GSM sense either forward power or collector/drain current. The RF3283 uses RFMD's PowerStarTM collector voltage control instead of a power detector. A high-speed control loop is incorporated to regulate the collector voltage of the amplifier while the stages are held at a constant bias. The VRAMP signal is multiplied by a factor of approximately 2.65, and the collector voltage for all three stages is regulated to the multiplied VRAMP voltage. This circuit is what performs the VBATT tracking so no external VRAMP adjustment is necessary. By doing so, the power amplifier can operate over a wider range of VRAMP values, and can meet transient spectrum requirements at lower VCC values. In addition, a current mirror is added to sense the power amplifier current. This loop senses the current, and feeds a voltage back into the control loop, and the collector voltage is further compensated to limit power and current variation. This allows for more efficient operation under mismatch conditions. Under nominal conditions, this loop is not activated, and is seemingly transparent. The basic circuit is shown in the following diagram.
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Rev A1 DS071010
RF3283
VBATT
VRAMP + + H(s) Saturation Detector
RF IN TX ENABLE
RF OUT
H(s)
By regulating the power, the stages are held in saturation across all power levels. As the required output power is decreased from full power down to -15dBm, the collector voltage is also decreased. This regulation of output power is demonstrated in Equation 1 where the relationship between collector voltage and output power is shown. Although load impedance affects output power, supply fluctuations are the dominate mode of power variations. With the RF3283 regulating, there are several key factors to consider in the implementation of a transmitter solution for a mobile phone. Some of them are:
( 2 V CC - V SAT ) P dBm = 10 log -------------------------------------------3 8 R LOAD 10
* * * * * * * * * * * * * * * * *
2
(Eq. 1)
Effective efficiency (EFF) Current draw and system efficiency Power variation due to Supply Voltage Power variation due to frequency Power variation due to temperature Input impedance variation Noise power Loop stability Loop bandwidth variations across power levels Burst timing and transient spectrum trade offs Harmonics Post PA loss Insertion loss in receive ports TX power leakage into the RX ports Performance during VSWR Time needed to implement the solution Needed board area for the solution
Rev A1 DS071010
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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RF3283
Talk time and power management are key concerns in transmitter design since the power amplifier is the leading current consumer in a mobile terminal. Considering only the power amplifier's efficiency does not provide a true picture for the total system efficiency. It is important to consider effective efficiency which is represented by EFF. (EFF considers the loss between the PA and antenna and is a more accurate measurement to determine how much current will be drawn in the application). EFF is defined by the following relationship (Equation 2):
10 - 10 EFF = -----------------------------------------------V BAT I BAT 10
P PA + P LOSS ----------------------------10
P IN ------10
(Eq. 2)
Where PPA is the output power from the PA, PLOSS the insertion loss and PIN the input power to the PA. The RF3283 improves the effective efficiency by minimizing the PLOSS term in the equation. An ASM may have a typical loss of 1.2dB in LB and 1.4dB in high band. To be added to this is trace losses and mismatch losses. A post PA loss of 1.5dB in LB and 1.8dB in HB is common. With the integration of a low loss pHEMT switch and matching network in the same module, higher system efficiency can be achieved. The components following the power amplifier often have insertion loss variation with respect to frequency. Usually, there is some length of microstrip that follows the power amplifier. There is also a frequency response found in directional couplers due to variation in the coupling factor over frequency, as well as the sensitivity of the detector diode. Since the RF3283 does not use a directional coupler with a diode detector, these variations do not occur. Also the TX/RX switch with low pass filters that usually follows the PA may contribute to frequency variation. The TX/RX switch incorporated in the RF3283 is very broadband and does not contribute to frequency roll off. Traditionally working with PA modules, some matching network is necessary between the PA output and the input of the TX/RX switch in order to get best possible performance. This work no longer has to be carried out, as this matching network is included in the RF3283. Noise power in PA's where output power is controlled by changing the bias voltage is often a problem when backing off of output power. The reason is that the gain is changed in all stages and according to the noise formula (Equation 3),
F2 - 1 F3 - 1 F TOT = F1 + --------------- + ------------------G1 G2 G1
(Eq. 3)
The noise figure depends on noise factor and gain in all stages. The bias point of the RF3283 is kept constant, therefore the gain in the first stage is always high and the overall noise power is not increased when decreasing output power. Power control loop stability often presents many challenges to transmitter design. Designing a proper power control loop involves trade-offs affecting stability, transient spectrum and burst timing. The RF3283 loop bandwidth is determined by internal bandwidth and does not change with respect to power levels. This makes it easier to maintain loop stability with a high bandwidth loop since the bias voltage and collector voltage do not vary. An often overlooked problem in PA control loops is that a delay not only decreases loop stability it also affects the burst timing when, for instance the input power from the VCO decreases (or increases) with respect to temperature or supply voltage. The burst timing then appears to shift to the right especially at low power levels. The RF3283 is insensitive to a change in input power and the burst timing is constant and requires no software compensation. Switching transients occur when the up and down ramp of the burst is not smooth enough or suddenly changes shape. If the control slope of a PA has an inflection point within the output power range or if the slope is simply too steep it is difficult to prevent switching transients. Controlling the output power by changing the collector voltage is as earlier described based on the physical relationship between voltage swing and output power. Furthermore, all stages are kept constantly biased so inflection points are nonexistent.
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Rev A1 DS071010
RF3283
Harmonics are natural products of high efficiency power amplifier design. An ideal class "E" saturated power amplifier will produce a perfect square wave. Looking at the Fourier transform of a square wave reveals high harmonic content. Although this is common to all power amplifiers, there are other factors that contribute to conducted harmonic content as well. With most power control methods a peak power diode detector is used to rectify and sense forward power. Through the rectification process there is additional squaring of the waveform resulting in higher harmonics. The RF3283 address this by eliminating the need for the detector diode. In addition, the RF3283 provides integrated harmonic filtering. Therefore the harmonics coming out of the PA should represent the maximum power of the harmonics throughout the transmit chain. This is based upon proper harmonic termination of the transmit port. Performance under VSWR Often overlooked when designing transmitters is the fact that they normally operate under mismatch conditions while they are designed to operate only under perfect 50 ohm loads. This means that in the real application, performance is degraded. This performance degradation may include reduction in output power, increased harmonic levels, increased transient spectrum and catastrophic failures, breakdown. Traditionally designers have verified that the PA does not break during mismatch and this is all verification that has been carried out during mismatch. Modern antennas in handsets often present a load that significantly deviates from nominal impedance. A VSWR of 5:1 is not uncommon. In order not to disturb other phones in the same and close by cells, it is important that the ETSI specifications for transient spectrum, burst timing and spurious emission are fulfilled even during mismatch conditions. The RF3283 is designed to maintain its performance even under high antenna mismatch conditions. The PowerStarTM methodology utilized in the RF3283 allows the transient spectrum in normal operation to be in the order of 35dBm to -40dBm but also both transient spectrum and the power versus time performance is unaffected even under mismatch conditions. Power output variation is minimized as well as the total current consumption. In addition, the harmonic level fluctuations are significantly decreased. TX/RX Switch The pHEMT switch integrated in the RF3283 allows for a low loss connection between the antenna port and the two RX ports. The insertion loss in the TX and RX paths is lower than the loss for a traditional pin-diode switch solution, which means lower current consumption in TX mode and better receiver sensitivity. The integrated switch also allows for less design complexity since there is no need for power amplifier to antenna switch matching.
Rev A1 DS071010
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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RF3283
Evaluation Board Layout Board Size 2.0" x 2.0"
Board Thickness 0.062", Board Material FR-4
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Rev A1 DS071010
RF3283
PCB Design Requirements
PCB Surface Finish The PCB surface finish used for RFMD's qualification process is electroless nickel, immersion gold. Typical thickness is 3 inch to 8 inch gold over 180 inch nickel. PCB Land Pattern Recommendation PCB land patterns for RFMD components are based on IPC-7351 standards and RFMD empirical data. The pad pattern shown has been developed and tested for optimized assembly at RFMD. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is recommended. PCB Metal Land Pattern
A = 0.80 x 0.75 Typ. B = 0.55 x 0.64 Typ. C = 0.95 x 0.64 Typ. 6.85 6.22 Typ. 5.85 Typ. 4.90 3.90 2.90 Typ. 1.95 1.00 0.63 0.00 A B B B B B B A B 1.07 Typ. B 2.02 Typ. B 2.97 Typ. B 3.92 Typ. 4.60 Typ. 5.70 Typ. C 6.57 Typ. 7.45 Typ. 8.00 Typ. 8.20 Typ. 9.20 Typ. B -0.37 -0.37 -0.42 Typ. 0.00 B 2.27 1.63 B B B B C B 5.17
Dimensions in mm.
7.27 Typ. 7.22 6.47
1.63
Rev A1 DS071010
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RF3283
PCB Solder Mask Pattern
A = 0.100 x 0.95 Typ. B = 0.75 x 0.84 Typ. C = 0.95 x 0.64 Typ. 2.37 Typ. 6.42 Typ. B B C D
Dimensions in mm.
6.85 Typ. 5.85 Typ. 4.90 Typ. 3.90 Typ. 2.90 Typ. 1.95 Typ. 1.00 Typ. 0.00 Typ.
A B B B B B B A
B
B
B
A B B B 3.42 Typ. B B 1.57 Typ. B 5.27 Typ.
B 1.07 Typ.
B 2.02 Typ.
B 2.97 Typ.
B 3.92 Typ.
C 5.15 Typ.
D 6.57 Typ.
B 7.72 Typ.
A
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0.00 Typ.
8.80 Typ.
Rev A1 DS071010

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